Ion beam modification of GaN based semiconductor heterostructures by N. Sathish; supervised by A.P. Pathak

Sathish, N.
Call Number
TH530 Sa81I
Author
Sathish, N.
Title
Ion beam modification of GaN based semiconductor heterostructures by N. Sathish; supervised by A.P. Pathak
Publication
Hyderabad: University of Hyderabad, 2009.
Physical Description
129p.
Notes
Thesis (Ph.D) - Physics - School of Physics - University of Hyderabad.
Added Author
Pathak, A.P., supervisor
Subject
PHYSICS - THESIS
Multimedia
Total Ratings: 0
Location Call Number Barcode Item Class Units Copy Number Status  
IGM Library TH530 Sa81I TH5450 Theses 1 Non-Circulating
 
 
 
00952nam a2200229 a 4500
001
 
 
vtls001511080
003
 
 
VRT
005
 
 
20250506163200.0
008
 
 
151116s                 m    000 0 eng d
039
9
$a 202505061632 $b hanu $c 202409231050 $d hanu $c 202002051242 $d thirupathi $c 201511161557 $d santha $y 201010131133 $z pjr
082
$a TH530 $b Sa81I
100
1
$a Sathish, N.
245
1
0
$a Ion beam modification of GaN based semiconductor heterostructures $c by N. Sathish; supervised by A.P. Pathak
260
$a Hyderabad: $b University of Hyderabad, $c 2009.
300
$a 129p.
500
$a Thesis (Ph.D) - Physics - School of Physics - University of Hyderabad.
650
0
$a PHYSICS - THESIS
700
1
$a Pathak, A.P., $e supervisor
856
4
$u http://igmlnet.uohyd.ac.in:8000/hi-res/hcu_images/TH5450.pdf
856
5
$u https://shodhganga.inflibnet.ac.in/handle/10603/4233
999
$a VIRTUA40
999
$a VTLSSORT0080*0820*1000*2450*2600*3000*5000*6500*7000*8560*8561*9992
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Notes
Thesis (Ph.D) - Physics - School of Physics - University of Hyderabad.
Subject
PHYSICS - THESIS
Multimedia