Superconducting Tc enhancement in weakly disordered Ge-covered tin films
Superconducting Tc enhancement in weakly disordered Ge-covered tin films
| dc.contributor.author | Parashar, R. S. | |
| dc.contributor.author | Srivastava, Vipin | |
| dc.date.accessioned | 2022-03-26T23:44:12Z | |
| dc.date.available | 2022-03-26T23:44:12Z | |
| dc.date.issued | 1985-01-01 | |
| dc.description.abstract | We report on the variation of the superconducting transition temperature with the electrical resistance ratio in weakly disordered Ge-covered tin films deposited at room temperature. The normal-state sheet resistance RN- varied between 0.2<RN-<4.2 /-. The transition temperature shows a maximum when the resistance ratio 7.5. Results are discussed in the light of the Anderson localization. © 1985 The American Physical Society. | |
| dc.identifier.citation | Physical Review B. v.32(9) | |
| dc.identifier.issn | 01631829 | |
| dc.identifier.uri | 10.1103/PhysRevB.32.6048 | |
| dc.identifier.uri | https://link.aps.org/doi/10.1103/PhysRevB.32.6048 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/2366 | |
| dc.title | Superconducting Tc enhancement in weakly disordered Ge-covered tin films | |
| dc.type | Journal. Article | |
| dspace.entity.type |
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