Superconducting Tc enhancement in weakly disordered Ge-covered tin films

Abstract

We report on the variation of the superconducting transition temperature with the electrical resistance ratio in weakly disordered Ge-covered tin films deposited at room temperature. The normal-state sheet resistance RN- varied between 0.2<RN-<4.2 /-. The transition temperature shows a maximum when the resistance ratio 7.5. Results are discussed in the light of the Anderson localization. © 1985 The American Physical Society.