Device fabrication on gallium arsenide/ aluminum gallium arsenide multilayer structures: study of some fabrication recipes and nickel - germanium correlation in metallization during ohmic contact formation by Ch. Ravi Kumar; supervised by Guruswamy Rajaram
Ravi Kumar, Ch.| Call Number | TH621.381 R19D |
| Author | Ravi Kumar, Ch. |
| Title | Device fabrication on gallium arsenide/ aluminum gallium arsenide multilayer structures: study of some fabrication recipes and nickel - germanium correlation in metallization during ohmic contact formation by Ch. Ravi Kumar; supervised by Guruswamy Rajaram |
| Publication | Hyderabad: University of Hyderabad, 2016. |
| Physical Description | 104p. |
| Notes | Thesis (Ph.D.) - Centre for Advanced Studies in Electronics Science and Technology - School of Physics - University of Hyderabad. |
| Added Author | Guruswamy, Rajaram.; supervisor |
| Subject | ELECTRONIC SCIENCE - THESIS |
| Multimedia |
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| Notes | Thesis (Ph.D.) - Centre for Advanced Studies in Electronics Science and Technology - School of Physics - University of Hyderabad. |
| Subject | ELECTRONIC SCIENCE - THESIS |
| Multimedia |