Studies on enhancement of resistive random access memory performance based on oxyzen affinity of metal electrodes and light induced resistive switching by L.D. Varma Sangani; supervised by M. Ghanashyam Krishna
Varma Sangani, L.D.| Call Number | TH621.381 V43S |
| Author | Varma Sangani, L.D. |
| Title | Studies on enhancement of resistive random access memory performance based on oxyzen affinity of metal electrodes and light induced resistive switching by L.D. Varma Sangani; supervised by M. Ghanashyam Krishna |
| Publication | Hyderabad: University of Hyderabad, 2018. |
| Physical Description | 180p. |
| Notes | Thesis (Ph.D) - Electronic Sciences - Centre for Advanced studies in Electronics Science and Technology - University of Hyderabad. |
| Added Author | Ghanashyam Krishna, M., supervisor |
| Subject | ELECTRONIC SCIENCES - THESIS |
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| Notes | Thesis (Ph.D) - Electronic Sciences - Centre for Advanced studies in Electronics Science and Technology - University of Hyderabad. |
| Subject | ELECTRONIC SCIENCES - THESIS |