Statistics for 120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO < inf > 2 < /inf > /GaO < inf > x < /inf > thin films and consequent effects on the electrical properties of HfO < inf > 2 < /inf > /GaO < inf > x < /inf > /Si-based MOS capacitors

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120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO < inf > 2 < /inf > /GaO < inf > x < /inf > thin films and consequent effects on the electrical properties of HfO < inf > 2 < /inf > /GaO < inf > x < /inf > /Si-based MOS capacitors	2

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