Phonons in disordered Si-Ge alloys

dc.contributor.author Srivastava, Vipin
dc.contributor.author Joshi, S. K.
dc.date.accessioned 2022-03-26T23:44:17Z
dc.date.available 2022-03-26T23:44:17Z
dc.date.issued 1973-01-01
dc.description.abstract The coherent-potential approximation for phonons in disordered binary alloys has been used to interpret the observed Raman spectra of the substitutionally disordered Si-Ge alloys. The spectral density function is calculated for the q→=0 optical phonons. © 1973 The American Physical Society.
dc.identifier.citation Physical Review B. v.8(10)
dc.identifier.issn 01631829
dc.identifier.uri 10.1103/PhysRevB.8.4671
dc.identifier.uri https://link.aps.org/doi/10.1103/PhysRevB.8.4671
dc.identifier.uri https://dspace.uohyd.ac.in/handle/1/2387
dc.title Phonons in disordered Si-Ge alloys
dc.type Journal. Article
dspace.entity.type
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