120 MeV Ag ion induced effects in Au/HfO < inf > 2 < /inf > /Si MOSCAPs
120 MeV Ag ion induced effects in Au/HfO < inf > 2 < /inf > /Si MOSCAPs
| dc.contributor.author | Manikanthababu, N. | |
| dc.contributor.author | Prajna, K. | |
| dc.contributor.author | Pathak, A. P. | |
| dc.contributor.author | Rao, S. V.S.Nageswara | |
| dc.date.accessioned | 2022-03-27T06:42:28Z | |
| dc.date.available | 2022-03-27T06:42:28Z | |
| dc.date.issued | 2018-05-08 | |
| dc.description.abstract | HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics. | |
| dc.identifier.citation | AIP Conference Proceedings. v.1953 | |
| dc.identifier.issn | 0094243X | |
| dc.identifier.uri | 10.1063/1.5032997 | |
| dc.identifier.uri | http://aip.scitation.org/doi/abs/10.1063/1.5032997 | |
| dc.identifier.uri | https://dspace.uohyd.ac.in/handle/1/9835 | |
| dc.title | 120 MeV Ag ion induced effects in Au/HfO < inf > 2 < /inf > /Si MOSCAPs | |
| dc.type | Conference Proceeding. Conference Paper | |
| dspace.entity.type |
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