Evaluation of cadmium telluride (CdTe) thin films grown at different annealing temperatures for efficient terahertz generation

dc.contributor.author	Mahendar, M.
dc.contributor.author	Chaudhary, A. K.
dc.contributor.author	Damarla, Ganesh
dc.contributor.author	Gupta, Vinay
dc.date.accessioned	2022-03-26T14:46:07Z
dc.date.available	2022-03-26T14:46:07Z
dc.date.issued	2019-12-01
dc.description.abstract	The paper reports the terahertz generation from polycrystalline CdTe thin films using 800 nm wavelength of 35 fs pulse duration at 1 kHz repetition rate obtained from Ti: sapphire laser amplifier. These films were deposited by thermal evaporation on a glass substrate and annealed at 200 and 300°C. The structural was investigated by XRD technique. Absorbance and transmittance were recorded in the wavelength (300- 800 nm). Optical studies showed that the optical energy gap decreases with increasing annealing temperatures. The results show that the film annealed at 200°C shows the highest generation of the order of 88 nW.
dc.identifier.citation	2019 Workshop on Recent Advances in Photonics, WRAP 2019
dc.identifier.uri	10.1109/WRAP47485.2019.9013662
dc.identifier.uri	https://ieeexplore.ieee.org/document/9013662/
dc.identifier.uri	https://dspace.uohyd.ac.in/handle/1/2235
dc.subject	Cadmium Telluride (CdTe)
dc.subject	Structural and Optical Properties
dc.subject	Terahertz generation
dc.subject	XRD
dc.title	Evaluation of cadmium telluride (CdTe) thin films grown at different annealing temperatures for efficient terahertz generation
dc.type	Conference Proceeding. Conference Paper
dspace.entity.type

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